Technologies for selectively etching oxide and nitride materials and products formed using the same
US10777421B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 18, 2017 |
| Grant date | Sep 15, 2020 |
| Priority date | — |
| Expiry date | Sep 18, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/834
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Technologies for selectively etching oxide and nitride materials on a work piece are described. Such technologies include methods for etching a work piece with a remote plasma that is produced by igniting a plasma gas flow. Microelectronic devices including first and second fins that are laterally offset by a fin pitch to define a first field there between are also described. In embodiments the microelectronic devices include a conformal oxide layer and a conformal nitride layer on at least a portion of the first and second fins, where the conformal nitride layer is on at least a portion of the conformal oxide layer and a sacrificial oxide material is disposed within the first field.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.