Semiconductor device and method of fabricating the same
US10777560B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 30, 2020 |
| Grant date | Sep 15, 2020 |
| Priority date | — |
| Expiry date | Mar 30, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B12/315
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Provided are a semiconductor device and a method of fabricating the same. The semiconductor device may include a semiconductor substrate including a first region and a second region, a dummy separation pattern provided on the second region of the semiconductor substrate to have a recessed region at its upper portion, a first electrode provided on the first region of the semiconductor substrate, a dielectric layer covering the first electrode, a second electrode provided on the dielectric layer, and a remaining electrode pattern provided in the recessed region. The second electrode and the remaining electrode pattern may be formed of a same material.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.