Global shutter CMOS image sensor and method for forming the same
US10777593B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Apr 1, 2019 |
| Grant date | Sep 15, 2020 |
| Priority date | — |
| Expiry date | Apr 1, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/8067
Abstract
A global shutter CMOS image sensor includes a photodiode, a floating diffusion region, and a storage diode disposed in the upper portion of the substrate. The storage diode is disposed between the photodiode and the floating diffusion region. A first transfer gate is disposed on the substrate between the photodiode and the storage node. A second transfer gate is disposed on the substrate between the storage diode and the floating diffusion region. A first dielectric layer is disposed on the substrate and covers the first transfer gate and the second transfer gate. A light-shielding layer is disposed on the first dielectric layer. A light pipe is disposed through the light-shielding layer and a portion of the first dielectric layer, and is correspondingly disposed above the photodiode. The light pipe has a higher refractive index than the first dielectric layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.