Imaging device
US10777597B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 20, 2018 |
| Grant date | Sep 15, 2020 |
| Priority date | — |
| Expiry date | Apr 2, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F30/225
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
To realize miniaturization of a pixel, reduction in noise, and high quantum efficiency, and to improve short-wavelength sensitivity while suppressing inter-pixel interference and variations for each pixel. According to the present disclosure, there is provided an imaging device including: a first semiconductor layer formed in a semiconductor substrate; a second semiconductor layer of a conductivity type opposite to a conductivity type of the first semiconductor layer formed on the first semiconductor layer; a pixel separation unit which defines a pixel region including the first semiconductor layer and the second semiconductor layer; a first electrode which is connected to the first semiconductor layer from one surface side of the semiconductor substrate; and a second electrode which is connected to the second semiconductor layer from a light irradiation surface side that is the other surface of the semiconductor substrate, and is formed to correspond to a position of the pixel separation unit.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.