Patent · US Active

CMOS image sensor with compact pixel layout

US10777601B1 · kind B1 · utility

1Cited by

5References

10Claims

0Family size

Assignee

SMARTSENS TECHNOLOGY(HK) CO., LIMITED · CN

Inventors

Chen Xu · New Providence, US
Zexu Shao · Shanghai, CN
Xin Wang · San Jose, US

Key dates

Filing date	Jun 16, 2020
Grant date	Sep 15, 2020
Priority date	—
Expiry date	Jun 16, 2040

Classification

Technology area (CPC H)Electricity
CPC primaryH04N25/778
WIPO fieldAudio-visual technology
WIPO sectorElectrical engineering

Abstract

An image sensor array of shared pixel units fabricated by a CMOS technology, wherein each pixel unit includes a plurality of photodiodes and respective transfer transistors and floating drains whose layout constitutes mirror images. The plurality of photodiodes each share a single reset transistor and source follower amplifier transistor wherein the shared floating diode is spaced at the minimum distance from a gate electrode of the source follower transistor as is allowed by the CMOS fabrication technology chosen to manufacture the image sensor array.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.