Manufacturing method of thin film transistor substrate and thin film transistor substrate manufactured by using the same
US10777666B2 · kind B2 · utility
Inventor
Key dates
| Filing date | Nov 27, 2018 |
| Grant date | Sep 15, 2020 |
| Priority date | — |
| Expiry date | Nov 27, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/01
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A manufacturing method of a thin film transistor substrate and the thin film transistor substrate manufactured by using the manufacturing method are provided. The manufacturing method includes: providing a substrate layer, forming a gate electrode layer on the substrate layer, forming an insulating layer on the substrate layer and the gate electrode layer by using a first solution, forming a channel layer on the insulating layer by using a second solution, and forming a source/drain electrode layer on the insulating layer. The insulating layer and the channel layer are formed by processes using solution, so high vacuum equipment is not required, and production costs are reduced.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.