Silicon carbide semiconductor device
US10777676B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 3, 2017 |
| Grant date | Sep 15, 2020 |
| Priority date | — |
| Expiry date | Oct 3, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/518
Abstract
The side surface has a first outer end surface. The bottom surface has a first bottom portion continuous to the first outer end surface, and a second bottom portion continuous to the first bottom portion and located on a side opposite to the inner end surface with respect to the first bottom portion. A silicon carbide substrate has a first region and a second region located between the at least one gate trench and a second main surface, and spaced from each other with a drift region being sandwiched therebetween. In a direction parallel to the first outer end surface, a spacing between the first region and the second region located between the first bottom portion and the second main surface is smaller than a spacing between the first region and the second region located between the second bottom portion and the second main surface.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.