Thin film transistor, method of manufacturing thin film transistor, array substrate and display panel
US10777683B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | May 6, 2019 |
| Grant date | Sep 15, 2020 |
| Priority date | — |
| Expiry date | May 6, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10K59/126
Abstract
A thin film transistor, a method of manufacturing the same, an array substrate and a display panel are disclosed. The thin film transistor includes a light blocking layer, an electrode layer, and a combination layer, which are sequentially stacked. The electrode layer includes a gate electrode, a source electrode and a drain electrode which are separated from one another, and the gate electrode is located between the source electrode and the drain electrode. The light blocking layer includes a first portion of which an orthogonal projection is located between an orthogonal projection of the gate electrode and an orthogonal projection of the source electrode; and a second portion of which an orthogonal projection is located between the orthogonal projection of the gate and an orthogonal projection of the drain. The combination layer includes an active layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.