Optoelectronic semiconductor chip and method of producing an optoelectronic semiconductor chip

US10777708B2 · kind B2 · utility

Assignee

• Osram OLED GMBH · DE

Inventors

• Fabian Kopp · Bukit Mertajam, MY
• Attila Molnar · Vadnais Heights, US

Key dates

• Filing date: Dec 12, 2017
• Grant date: Sep 15, 2020
• Expiry date: Dec 12, 2037

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10H20/835

Abstract

An optoelectronic semiconductor chip includes a semiconductor layer sequence, a transparent substrate, at least one contact trench, at least one insulating trench, at least one current distribution trench, at least in the insulating trench, an electrically insulating mirror layer that reflects radiation generated in an active layer, at least one metallic current web in the contact trench configured for a current conduction along the contact trench and supplying current to a first semiconductor region, and at least one metallic busbar in the current distribution trench that energizes a second semiconductor region, wherein the contact trench, the isolating trench and the current distribution trench extend from a side of the second semiconductor region facing away from the substrate through the active layer into the first semiconductor region, and the contact trench is completely surrounded by the insulating trench, and the current distribution trench lies only outside the insulating trench.