Switching element, variable resistance memory device, and method of manufacturing the switching element
US10777745B2 · kind B2 · utility
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7References
19Claims
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Key dates
| Filing date | Mar 26, 2019 |
| Grant date | Sep 15, 2020 |
| Priority date | — |
| Expiry date | Mar 26, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N70/8836
Abstract
A switching element includes a lower barrier electrode on a substrate, a switching pattern on the lower barrier electrode, and an upper barrier electrode on the switching pattern. The lower barrier electrode includes a first lower barrier electrode layer, and a second lower barrier electrode layer interposed between the first lower barrier electrode layer and the switching pattern and whose density is different from the density of the first lower barrier electrode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.