Passivation film deposition method for light-emitting diode
US10777777B2 · kind B2 · utility
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6Claims
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Key dates
| Filing date | Sep 7, 2018 |
| Grant date | Sep 15, 2020 |
| Priority date | — |
| Expiry date | Sep 7, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10K2102/351
Abstract
The present invention relates to a passivation film deposition method for a light-emitting diode, comprising the steps of: depositing, on an upper part of a light-emitting diode of a substrate, a first passivation film having a silicon nitride (SiNx); and depositing, on an upper part of the first passivation film, a second passivation film having a silicon oxide (SiOx), wherein the ratio of the thickness of the first passivation film to the thickness of the second passivation film is 0.2-0.4:1.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.