Optically clear photo-polymerization resists for additive manufacturing of radiopaque parts
US10781315B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 1, 2016 |
| Grant date | Sep 22, 2020 |
| Priority date | — |
| Expiry date | Dec 15, 2036 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC07C231/12
- WIPO fieldOrganic fine chemistry
- WIPO sectorChemistry
Abstract
According to one embodiment, a method includes contacting a triiodobenzoic acid with an oxalyl chloride in a solvent whereby triiodobenzoyl chloride is formed, contacting diethanolamine with triiodobenzoyl chloride where triiodobenzoic diol amine is formed, and forming an acrylate of triiodobenzoic diol amine with acryloyl chloride where an organoiodine compound is formed. According to another embodiment, an optically clear photopolymer resist blend for additive manufacturing includes a radiopaque pre-polymer compound where the compound includes at least one of the following: iodine, bromine, tin, lead, or bismuth. The resist blend also includes a photoinitiator, a polymerization inhibitor, and a base pre-polymer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.