Method for producing a reflection-reducing layer system
US10782451B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 20, 2017 |
| Grant date | Sep 22, 2020 |
| Priority date | — |
| Expiry date | Dec 20, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/31138
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A method for producing a reflection-reducing layer system is disclosed. In an embodiment, a method includes depositing an organic layer on the substrate, generating a nanostructure in the organic layer by a plasma etching process, applying a cover layer to the nanostructure, wherein the organic layer, the nanostructure and the cover layer together form a reflection-reducing structure, wherein the cover layer comprises an inorganic material or an organosilicon compound, and wherein the cover layer is at least 5 nm thick and performing a post-treatment after applying the cover layer, wherein a material of the organic layer is at least partially removed, decomposed or chemically converted, and wherein an effective refractive index neff,2 of the reflection-reducing structure after the post-treatment is smaller than an effective refractive index neff,1 of the reflection-reducing structure before the post-treatment.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.