Methods of enhancing surface topography on a substrate for inspection
US10784114B2 · kind B2 · utility
1Cited by
2References
20Claims
0Family size
Assignee
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Key dates
| Filing date | Oct 31, 2019 |
| Grant date | Sep 22, 2020 |
| Priority date | — |
| Expiry date | Oct 31, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/31111
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Methods for enhancing a surface topography of a structure formed on a substrate are provided. In one example, the method includes performing a polishing process on a substrate having a shallow trench isolation structure and a diffusion region, performing a surface topography enhancing process to enlarge a defect in at least one of the shallow trench isolation structure and the diffusion region, inspecting at least one of the shallow trench isolation structure and the diffusion region to detect the enlarged defect, and adjusting a parameter of the polishing process in response to detecting the enlarged defect.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.