Semiconductor device and method for fabricating the same
US10784179B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 3, 2020 |
| Grant date | Sep 22, 2020 |
| Priority date | — |
| Expiry date | Apr 3, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/8503
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for fabricating a semiconductor device includes sequentially laminating a separation layer and a first substrate layer on a sacrificial substrate, and forming a heat dissipation plate comprising a first region and a second region on the first substrate layer. The method further includes removing the sacrificial substrate and the separation layer, and patterning the first substrate layer to form a first substrate exposing the heat dissipation plate in the second region and contacting the heat dissipation plate in the first region, and forming a first element on the first substrate. The method still further includes forming a plurality of conductive pads disposed on the heat dissipation plate in the second region and a first line connecting at least one of the plurality of conductive pads to the first element, and forming a second element on the conductive pads in the second region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.