Semiconductor device including through silicon vias distributing current
US10784184B2 · kind B2 · utility
1Cited by
7References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 31, 2019 |
| Grant date | Sep 22, 2020 |
| Priority date | — |
| Expiry date | Jan 31, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2225/06544
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device includes first to M-th semiconductor dies stacked in a first direction. Each of the first to M-th semiconductor dies includes a substrate, first to K-th through silicon vias passing through the substrate in the first direction, and a first circuit to receive power through a power supply line electrically connected to the first through silicon via. Each of first to K-th through silicon vias of the N-th semiconductor die is electrically connected to a through silicon via of first to K-th through silicon vias of the (N+1)-th semiconductor die that is spaced apart therefrom in a plan view.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.