Trenches for increasing a quantity of reliable chips produced from a wafer
US10784354B2 · kind B2 · utility
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20Claims
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Assignee
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Key dates
| Filing date | Mar 16, 2018 |
| Grant date | Sep 22, 2020 |
| Priority date | — |
| Expiry date | Mar 16, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/815
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A light-emitting device may comprise a set of layers comprising a substrate layer, and a set of epitaxial layers deposited on the substrate layer. The set of epitaxial layers may include a strained layer. The strained layer may include a set of active zones to be used to generate optical gain. The light-emitting device may comprise a set of trenches etched into a subset of the set of layers of the light-emitting device. The set of trenches may prevent a set of defects or dislocations in a wafer from which the light-emitting device was formed from propagating into the set of active zones.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.