Optical semiconductor device
US10784649B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 23, 2017 |
| Grant date | Sep 22, 2020 |
| Priority date | — |
| Expiry date | Mar 23, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/34366
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A semiconductor laser (2) includes an n-type semiconductor substrate (1), a stack of an n-type cladding layer (4), an active layer (5), and a p-type cladding layer (6) successively stacked on the n-type semiconductor substrate (1). An optical waveguide (3) includes a non-impurity-doped core layer (9) provided on a light output side of the semiconductor laser (2) on the n-type semiconductor substrate (1) and having a larger forbidden band width than the active layer (5), and a cladding layer (10) provided on the core layer (9) and having a lower carrier concentration than the p-type cladding layer (6). The semiconductor laser (2) includes a carrier injection region (X1), and a non-carrier-injection region (X2) provided between the carrier injection region (X1) and the optical waveguide (3).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.