Laser bars having trenches

US10784653B2 · kind B2 · utility

Assignee

• Osram OLED GMBH · DE

Inventors

• Andreas Loeffler · Neutraubling, DE
• Clemens Vierheilig · Tegernheim, DE
• Sven Gerhard · Alteglofsheim, DE

Key dates

• Filing date: Feb 23, 2017
• Grant date: Sep 22, 2020
• Expiry date: Feb 23, 2037

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01S2304/12
• WIPO field: Optics
• WIPO sector: Instruments

Abstract

A laser bar includes a semiconductor layer including a plurality of layers and includes an active zone, wherein the active zone is arranged in an x-y-plane, laser diodes each form a mode space in an x-direction between two end faces, the mode spaces of the laser diodes are arranged alongside one another in a y-direction, a trench is provided in the semiconductor layer between two mode spaces, the trenches extend in the x-direction, and the trenches extend from a top side of the semiconductor layer in a z-direction to a predefined depth in the direction of the active zone.