Control circuit for half-bridge diodes
US10784787B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 28, 2014 |
| Grant date | Sep 22, 2020 |
| Priority date | — |
| Expiry date | Oct 10, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH03K17/74
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
A circuit includes a first field-effect transistor and a second field-effect transistor. The first field-effect transistor includes a first diode with drain, source, gate and first additional electrodes. The second field-effect transistor includes a second diode with drain, source, gate and second additional electrodes. A first switch selectively connects the gate and drain electrodes of the first field-effect transistor. A second switch selectively connects the gate and drain electrodes of the second field-effect transistor. A control circuit controls the first and second switches. The first additional electrode is coupled to the gate electrode of the second field-effect transistor, and the second additional electrode is coupled to the gate electrode of the first field-effect transistor.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.