High power radio frequency amplifiers and methods of manufacture thereof
US10784822B2 · kind B2 · utility
2Cited by
6References
19Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 19, 2018 |
| Grant date | Sep 22, 2020 |
| Priority date | — |
| Expiry date | Dec 19, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH03F2200/451
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The embodiments described herein provide radio frequency (RF) amplifiers, and in some embodiments provide amplifiers that can be used in high power RF applications. Specifically, the amplifiers described herein may be implemented with multiple resonant circuits to provide class F and inverse class F amplifiers and methods of operation. In general, the resonant circuits are implemented inside a device package with a transistor die to provide high efficiency amplification for a variety of applications.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.