Air-gap type film bulk acoustic resonator and method of manufacturing the same
US10784838B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | May 3, 2018 |
| Grant date | Sep 22, 2020 |
| Priority date | — |
| Expiry date | Oct 2, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH03H2003/021
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
Disclosed is an air gap type film bulk acoustic resonator (FBAR). The air gap type FBAR includes a substrate which includes an air gap portion in a top surface thereof, a lower electrode formed on the substrate, a piezoelectric layer formed on the lower electrode, and an upper electrode formed on the piezoelectric layer. Here, the lower electrode includes a first lower electrode formed spaced apart from the air gap portion in the substrate and a second lower electrode formed on the substrate to be separated from the first lower electrode by being stacked to surround only a part of a top of the air gap portion in order to form a non-deposition area of the air gap portion.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.