Image sensor
US10785432B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 5, 2018 |
| Grant date | Sep 22, 2020 |
| Priority date | — |
| Expiry date | Sep 5, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH04N25/78
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
An image sensor includes a photoelectric converter to generate charges in response to incident light and to provide the generated charges to a first node, a transfer transistor to provide a voltage of the first node to a floating diffusion node based on a first control signal, a source follower transistor to provide a voltage of the floating diffusion node as a unit pixel output, a correlated double sampler (CDS) to receive the unit pixel output and to convert the unit pixel output into a digital code. The first control signal having first, second, and third voltages is maintained at the second voltage in a period between when the voltage of the first node is provided to the floating diffusion node and when the CDS is provided with the voltage of the first node as the unit pixel output.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.