Patent · US Active

Infrared emitter

US10785830B2 · kind B2 · utility

0Cited by

22References

20Claims

0Family size

Assignees

HERAEUS NOBLELIGHT GMBH · DE
HERAEUS QUARZGLAS GMBH & CO. KG · DE

Inventors

Lotta GAAB · Darmstadt, DE
Nils Christian Nielsen · Göllheim, DE
Gerrit Scheich · Seligenstadt, DE
Jurgen Weber · Oberhausen, DE
Frank Wessely · Dieburg, DE

Key dates

Filing date	Nov 11, 2016
Grant date	Sep 22, 2020
Priority date	—
Expiry date	Apr 30, 2037

Classification

Technology area (CPC H)Electricity
CPC primaryH05B2203/032
WIPO fieldElectrical machinery, apparatus, energy
WIPO sectorElectrical engineering

Abstract

An infrared emitter is provided. The infrared emitter includes a substrate made of an electrically insulating material. The substrate includes a surface that contacts a printed conductor made of a resistor material that is electrically conducting and generates heat when current flows through it. The electrically insulating material includes an amorphous matrix component into which an additional component is embedded that absorbs in the spectral range of infrared radiation. At least a part of the surface is configured with a cover layer made of porous glass, whereby the printed conductor is embedded, at least in part, in the cover layer.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.