Semiconductor device, measurement device, measurement method, and semiconductor system for plasma induced damage (PID) measurement
US10788525B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 22, 2016 |
| Grant date | Sep 29, 2020 |
| Priority date | — |
| Expiry date | May 16, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L22/34
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
Provided is a semiconductor device, a measurement device, a measurement method, and a semiconductor system that enable accurate measurement of the plasma induced damage (PID) effect on a small scale. The semiconductor device includes an NMOSFET whose gate is connected to an antenna part that functions as an antenna in a plasma process and a PMOSFET that controls the connection between the NMOSFET and a ring oscillator. The semiconductor device is provided with a test element group (TEG) that includes an NMOSFET whose gate is connected to an antenna part that functions as an antenna in a plasma process and a PMOSFET that controls the connection between the NMOSFET and a ring oscillator.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.