Techniques to a set voltage level for a data access
US10789124B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 28, 2018 |
| Grant date | Sep 29, 2020 |
| Priority date | — |
| Expiry date | Sep 28, 2038 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2029/0411
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
Examples described herein can be used to reduce a number of re-read operations and potentially avoid data recovery operations, which can be time consuming. A determination can be made of a read voltage to apply during an operation to cause a read of data stored in a region of a memory device. The region of the memory device can be read using the read voltage. If the region is not successfully read, then an error level indication can be measured and a second read voltage can be determined for a re-read operation. If the re-read operation is not successful, then a second error level indication can be measured for the re-read operation. A third read voltage can be selected based on the change from the error level indication to the second error level indication.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.