Semiconductor device with interconnect structure and fabrication method thereof

US10790227B2 · kind B2 · utility

Assignees

• Semiconductor Manufacturing International (Beijing) Corporation · CN
• Semiconductor Manufacturing International (Shanghai) Corporation · CN

Inventor

• Xing Song · Mountain View, US

Key dates

• Filing date: Mar 5, 2019
• Grant date: Sep 29, 2020
• Expiry date: Mar 5, 2039

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L23/53228
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

Semiconductor structures and fabrication methods are provided. An exemplary fabrication method includes providing a semiconductor substrate; forming a first dielectric layer having a first region and a second regions at each of two sides of the first region on the semiconductor substrate; forming a first opening in the first region of the first dielectric layer and a second opening in each of the second regions of the first dielectric layer; forming a first interconnect member in the first opening; forming a second interconnect member with a top surface lower than a top surface of the first dielectric layer in each of the second openings; forming a second dielectric layer having a third opening with a bottom exposing a top surface of the first interconnect member on surfaces of the first interconnect member, second interconnect members and the first dielectric layer; and forming an interconnect structure in the third opening.