Patent · US Active

Techniques for integrating three-dimensional islands for radio frequency (RF) circuits

US10790332B2 · kind B2 · utility

0Cited by

1References

5Claims

0Family size

Assignee

Intel Corporation · US

Inventors

Bruce A. Block · Portland, US
Paul B. Fischer · Portland, US
Nebil Tanzi · Hoffman Estates, US
Gregory Chance · Oberhaching, DE
Han Wui Then · Portland, US
Sansaptak Dasgupta · Hillsboro, US
Marko Radosavljevic · Portland, US

Key dates

Filing date	Dec 24, 2015
Grant date	Sep 29, 2020
Priority date	—
Expiry date	Dec 24, 2035

Classification

Technology area (CPC H)Electricity
CPC primaryH03H2009/155
WIPO fieldBasic communication processes
WIPO sectorElectrical engineering

Abstract

Techniques to fabricate an RF filter using 3 dimensional island integration are described. A donor wafer assembly may have a substrate with a first and second side. A first side of a resonator layer, which may include a plurality of resonator circuits, may be coupled to the first side of the substrate. A weak adhesive layer may be coupled to the second side of the resonator layer, followed by a low-temperature oxide layer and a carrier wafer. A cavity in the first side of the resonator layer may expose an electrode of the first resonator circuit. An RF assembly may have an RF wafer having a first and a second side, where the first side may have an oxide mesa coupled to an oxide layer. A first resonator circuit may be then coupled to the oxide mesa of the first side of the RF wafer.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.