Manufacturing method of polysilicon semiconductor layer,thin film transistor and manufacturing method
US10790377B2 · kind B2 · utility
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Key dates
| Filing date | Aug 3, 2018 |
| Grant date | Sep 29, 2020 |
| Priority date | — |
| Expiry date | Oct 16, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/6745
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for manufacturing a polysilicon semiconductor layer, a thin film transistor, and a manufacturing method are provided. The method for manufacturing a polysilicon semiconductor layer includes the following steps. A predetermined gas is dissociated, and a low amount of first ions and a high amount of second ions are screened out. A heavily doped region is doped with the second ions. A lightly doped region is doped with the first ions. Annealing is further performed, so that a polysilicon semiconductor layer is formed from an amorphous silicon layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.