Wafer bonding for laser lift-off
US10790408B1 · kind B1 · utility
Assignee
Inventor
Key dates
| Filing date | Mar 22, 2019 |
| Grant date | Sep 29, 2020 |
| Priority date | — |
| Expiry date | Apr 1, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/812
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A micro-light emitting diode (LED) is manufactured using a lift-off substrate that is removed using a laser-lift-off process. A method for manufacturing the LED may include forming an epitaxial structure of the LED on a growth substrate, and attaching an open side of the epitaxial structure with a gallium-based layer and a lift-off substrate, the gallium-based layer between the epitaxial structure and the lift-off substrate. The growth substrate is separated from the epitaxial structure, and the epitaxial structure may be processed into the LED. Light is applied to the gallium-based layer through the lift-off substrate to debond the second portion of the gallium-based layer and the lift-off substrate. The lift-off substrate is separated from the second portion of the gallium-based layer to expose a light emitting surface of the LED on the second portion of the gallium-based layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.