Nitride semiconductor light-emitting element
US10790409B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 13, 2018 |
| Grant date | Sep 29, 2020 |
| Priority date | — |
| Expiry date | Aug 13, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/825
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A nitride semiconductor light-emitting element includes at least an n-type nitride semiconductor layer, a light-emitting layer, and a p-type nitride semiconductor layer. A multilayer body is provided between the n-type nitride semiconductor layer and the light-emitting layer, having at least one stack of first and second semiconductor layers. The second semiconductor layer has a greater band-gap energy than the first semiconductor layer. The first and second semiconductor layers each have a thickness of more than 10 nm and 30 nm or less. In applications in which luminous efficiency at room temperature is a high priority, the first semiconductor layer has a thickness of more than 10 nm and 30 nm or less, the second semiconductor layer has a thickness of more than 10 nm and 40 nm or less, and the light-emitting layer has V-shaped recesses in cross-sectional view.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.