Patent · US Active

Oriented piezoelectric film and method of manufacturing same, and liquid ejection head

US10790436B2 · kind B2 · utility

0Cited by
2References
9Claims
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Key dates

Filing dateJun 13, 2019
Grant dateSep 29, 2020
Priority date
Expiry dateJun 13, 2039

Classification

  • Technology area (CPC C)Chemistry; Metallurgy
  • CPC primaryC01P2004/03
  • WIPO fieldMaterials, metallurgy
  • WIPO sectorChemistry

Abstract

Provided is use of an oriented piezoelectric film including of a perovskite-type crystal represented by the following general formula (1): Ba1-xCaxTi1-yZryO3 (0≤x≤0.2, 0≤y≤0.2) (1). The oriented piezoelectric film is formed on an oriented underlayer oriented in a (111) plane and contains first crystals oriented in the (111) plane with respect to a film surface and randomly oriented second crystal grains. The first crystal grains have an average grain diameter of from 300 nm to 600 nm and the second crystal grains have an average grain diameter of from 50 nm to 200 nm.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.