Spin-transfer-torque synthetic anti-ferromagnetic switching device
US10790441B2 · kind B2 · utility
1Cited by
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15Claims
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Key dates
| Filing date | Mar 14, 2017 |
| Grant date | Sep 29, 2020 |
| Priority date | — |
| Expiry date | Mar 14, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N52/00
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A switching device, comprising an anti-ferromagnet structure having an upper layer and a lower layer, the upper layer and lower layer anti-ferromagnetically coupled by an exchange coupling layer, the upper and lower layer formed of a similar material but having differing volumes, and wherein the device is configured to inject symmetrically spin-polarized currents through the upper and lower layers to achieve magnetic switching of the anti-ferromagnet structure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.