Method of production of langatate-based single crystal and langatate-based single crystal
US10793968B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Aug 18, 2016 |
| Grant date | Oct 6, 2020 |
| Priority date | — |
| Expiry date | Oct 30, 2036 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC30B29/30
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method of production of a high insulation resistance, high strength langatate-based single crystal and a langatate-based single crystal are provided. That is, a method of production of a langatate-based single crystal using the Czochralski method of pulling up a crystal from a starting material solution so as to grow a langatate-based single crystal, comprising placing the starting material solution of the single crystal in a platinum crucible and growing the single crystal using the Z-axis as the growth axis in a growth atmosphere of a mixed gas comprising an inert gas in which an oxidizing gas is contained in an amount greater than 5 vol %.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.