Patent · US Active

Low profile embedded non-intrusive stress measurement system probe

US10794795B2 · kind B2 · utility

0Cited by

7References

20Claims

0Family size

Assignee

RAYTHEON TECHNOLOGIES CORPORATION · US

Inventors

Eli Cole Warren · Wethersfield, US
Michael F. Sabol · Port St. Lucie, US
Alan E. Ingram · Lighthouse Point, US
Michael J. Saitta · East Hampton, US
Darren M. Wind · Glastonbury, US
Steven D. Mitchell · Port St. Lucie, US
Sebastian Martinez · Middletown, US
Kevin A. Ford · Middletown, US
Patrick M. Harrington · Town of West Hartford, US

Key dates

Filing date	Sep 14, 2018
Grant date	Oct 6, 2020
Priority date	—
Expiry date	Apr 11, 2039

Classification

Technology area (CPC G)Physics
CPC primaryG01H1/006
WIPO fieldMeasurement
WIPO sectorInstruments

Abstract

A low profile un-lensed non-intrusive stress measurement system probe may comprise a housing comprising a first channel and an optical face, a first hypotube disposed within the first channel and coupled at a sensing aperture in the optical face, and a plurality of optical fibers disposed within the first hypotube, wherein the first hypotube executes a bend between 45° and 90° within the housing.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.