Method for forming epitaxial layer at low temperature
US10796915B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 14, 2017 |
| Grant date | Oct 6, 2020 |
| Priority date | — |
| Expiry date | Aug 14, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/67207
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Provided is a method for forming an epitaxial layer at a low temperature. The method for forming the epitaxial layer includes transferring a substrate into an epitaxial chamber and performing an epitaxial process on the substrate to form an epitaxial layer on the substrate. The epitaxial process includes heating the substrate at a temperature of about 700° C. or less and injecting a silicon gas into the epitaxial chamber in a state in which the inside of the epitaxial chamber is adjusted to a pressure of about 300 Torr or less to form a first epitaxial layer, stopping the injection of the silicon gas and injecting a purge gas into the epitaxial chamber to perform first purge inside the epitaxial chamber, heating the substrate at a temperature of about 700° C. or less and injecting the silicon gas into the epitaxial chamber in the state in which the inside of the epitaxial chamber is adjusted to a pressure of about 300 Torr or less to form a second epitaxial layer, and stopping the injection of the silicon gas and injecting the purge gas into the epitaxial chamber to perform second purge inside the epitaxial chamber.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.