Semiconductor device and manufacturing method thereof by forming thin uniform silicide on epitaxial source/drain structure
US10796924B2 · kind B2 · utility
2Cited by
11References
18Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 19, 2016 |
| Grant date | Oct 6, 2020 |
| Priority date | — |
| Expiry date | Dec 19, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D99/00
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
In a method of manufacturing a semiconductor device, a first layer containing a Si1-xGex layer doped with phosphorous is formed over an n-type semiconductor layer, a metal layer containing a metal material is formed over the first layer, and a thermal process is performed to form an alloy layer including Si, Ge and the metal material.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.