Semiconductor device and method of forming the same
US10796996B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 29, 2017 |
| Grant date | Oct 6, 2020 |
| Priority date | — |
| Expiry date | Aug 29, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L23/5226
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device includes a substrate, a dielectric layer disposed on the substrate, and a conductive stack disposed within the dielectric layer. The conductive stack includes at least one first conductive layer, a second conductive layer disposed over the at least one first conductive layer, and a contact structure disposed between the at least one first conductive layer and the second conductive layer. The contact structure includes a contact via electrically connecting the at least one first conductive layer to the second conductive layer, and a glue layer conformal to sidewalls and a bottom surface of the contact via. The glue layer has isolated lattices and an amorphous region at which the isolated lattices are uniformly distributed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.