Fin field effect transistor (finFET) device structure with capping layer and method for forming the same
US10797050B2 · kind B2 · utility
1Cited by
1References
20Claims
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Key dates
| Filing date | Oct 8, 2019 |
| Grant date | Oct 6, 2020 |
| Priority date | — |
| Expiry date | Oct 8, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/797
Abstract
A FinFET device structure is provided. The FinFET device structure includes a first gate structure formed over a fin structure, and a first capping layer formed over the first gate structure. The FinFET device structure includes a first etching stop layer formed over the first capping layer and the first gate structure, and a top surface and a sidewall surface of the first capping layer are in direct contact with the first etching stop layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.