Semiconductor device, display apparatus, method of manufacturing semiconductor device and method of manufacturing display apparatus
US10797088B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Sep 14, 2017 |
| Grant date | Oct 6, 2020 |
| Priority date | — |
| Expiry date | Sep 14, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10K59/1213
Abstract
A semiconductor device includes an insulating substrate, a polysilicon layer, a first-gate-insulating layer, a first metal layer, an oxide-semiconductor layer, a second-gate-insulating layer, a second metal layer, a first insulating interlayer, a third metal layer, a first top gate planar type thin film transistor in which the polysilicon layer serves as a channel, and a second top gate planar self-aligned type thin film transistor in which the oxide-semiconductor layer serves as a channel. The gates of the first top gate planar type thin film transistor and the second top gate planar self-aligned type thin film transistor are made of the first and second metal layers, respectively. The sources and the drains of the first top gate planar type thin film transistor and the second top gate planar self-aligned type thin film transistor are made of the third metal layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.