Semiconductor device
US10797165B2 · kind B2 · utility
0Cited by
8References
19Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 29, 2018 |
| Grant date | Oct 6, 2020 |
| Priority date | — |
| Expiry date | Aug 29, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/85
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device includes a well region in a substrate, a semiconductor pattern on the well region, the semiconductor pattern including an impurity, and a gate electrode on the semiconductor pattern. A concentration of the impurity in the semiconductor pattern increases in a direction from an upper portion of the semiconductor pattern, adjacent to the gate electrode, to a lower portion of the semiconductor pattern, adjacent to the well region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.