Semiconductor device, method for manufacturing the same, and electronic device
US10797180B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 4, 2019 |
| Grant date | Oct 6, 2020 |
| Priority date | — |
| Expiry date | Dec 4, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/8053
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The semiconductor device includes a first insulating layer; a first oxide insulating layer over the first insulating layer; an oxide semiconductor layer over the first oxide insulating layer; a source electrode layer and a drain electrode layer over the oxide semiconductor layer; a second oxide insulating layer over the oxide semiconductor layer, the source electrode layer, and the drain electrode layer; a gate insulating layer over the second oxide insulating layer; a gate electrode layer over the gate insulating layer; a second insulating layer over the first insulating layer the source electrode layer, the drain electrode layer, the second oxide insulating layer, the gate insulating layer, and the gate electrode layer, and a third insulating layer over the first insulating layer, the source electrode layer, the drain electrode layer, and the second insulating layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.