Bias control structure for avalanche photodiodes
US10797193B2 · kind B2 · utility
1Cited by
11References
20Claims
0Family size
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Key dates
| Filing date | Jan 22, 2019 |
| Grant date | Oct 6, 2020 |
| Priority date | — |
| Expiry date | Jan 22, 2039 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG02B2006/12123
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
According to some implementations, an avalanche photodiode may include a photon absorbing layer to absorb photons of an optical beam and to provide a response. The avalanche photodiode may include a gain response layer to provide a gain to the response. The avalanche photodiode may include a bias control structure connected to the gain response layer to control an electric field in the photon absorbing layer and the gain response layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.