Silicon-based anode active material and preparation method therefor
US10797303B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 25, 2016 |
| Grant date | Oct 6, 2020 |
| Priority date | — |
| Expiry date | Oct 11, 2036 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02E60/10
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
The present invention relates to a silicon-based anode active material and a method of fabricating the same. The silicon-based anode active material according to an embodiment of the present invention comprises: particles comprising silicon and oxygen combined with the silicon, wherein a carbon-based conductive layer is coated with on outermost surface of the particles; and phosphorus doped in the particles, wherein a content of the phosphorus with respect to a total weight of the particles and the phosphorus doped in the particles have a range of 0.01 wt % to 15 wt %, and a content of the oxygen has a range of 9.5 wt % to 25 wt %.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.