Silicon-based anode active material and method for manufacturing same
US10797312B2 · kind B2 · utility
8Cited by
8References
20Claims
0Family size
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Key dates
| Filing date | Dec 30, 2015 |
| Grant date | Oct 6, 2020 |
| Priority date | — |
| Expiry date | Sep 20, 2036 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02E60/10
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
The present invention relates to a silicon-based anode active material and a method for manufacturing the same. The silicon-based anode active material according to an embodiment of the present invention comprises: particles comprising silicon and oxygen combined with the silicon, and having a carbon-based conductive film coated on the outermost periphery thereof; and boron doped inside the particles, wherein with respect to the total weight of the particles and the doped boron, the boron is included in the amount of 0.01 weight % to 17 weight %, and the oxygen is included in the amount of 16 weight % to 29 weight %.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.