Semiconductor laser and method for producing such a semiconductor laser

US10797469B2 · kind B2 · utility

Assignee

• Osram OLED GMBH · DE

Inventors

• Hubert Halbritter · Dietfurt, DE
• Andreas Plößl · Regensburg, DE
• Roland Enzmann · Regensburg, DE
• Martin Rudolf Behringer · Regensburg, DE

Key dates

• Filing date: Jan 9, 2018
• Grant date: Oct 6, 2020
• Expiry date: Jan 9, 2038

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01S2301/18
• WIPO field: Optics
• WIPO sector: Instruments

Abstract

A semiconductor laser and a method for producing such a semiconductor laser are disclosed. In an embodiment a semiconductor laser has at least one surface-emitting semiconductor laser chip including a semiconductor layer sequence having at least one active zone configured to generate laser radiation and a light exit surface oriented perpendicular to a growth direction of the semiconductor layer sequence. The laser further includes a diffractive optical element configured to expand and distribute the laser radiation, wherein an optically active structure of the diffractive optical element is made of a material having a refractive index of at least 1.65 regarding a wavelength of maximum intensity of the laser radiation; and a connector engaging at least in places into the optically active structure and completely filling the optically active structure at least in places.