Patent · US Active

Process for the generation of thin inorganic films

US10801105B2 · kind B2 · utility

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1References
14Claims
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Assignee

Inventors

Key dates

Filing dateNov 18, 2016
Grant dateOct 13, 2020
Priority date
Expiry dateMar 30, 2037

Classification

  • Technology area (CPC C)Chemistry; Metallurgy
  • CPC primaryC23C16/45553
  • WIPO fieldSurface technology, coating
  • WIPO sectorChemistry

Abstract

The present invention is in the field of processes for the generation of thin inorganic films on substrates, in particular atomic layer deposition processes. The present invention relates to a process comprising bringing a compound of general formula (I) into the gaseous or aerosol state and depositing the compound of general formula (I) from the gaseous or aerosol state onto a solid substrate, wherein R1, R2, R3, and R4 are independent of each other an alkyl group, an aryl group or a trialkylsilyl group, M is Mn, Ni or Co, X is a ligand which coordinates M, wherein at least one X is a neutrally charged ligand, m is 1, 2 or 3 and n is at least 1 wherein the molecular weight of the compound of general formula (I) is up to 1000 g/mol.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.