Patent · US Active

Ferroelectric element and method of manufacturing ferroelectric element

US10801113B2 · kind B2 · utility

0Cited by

8References

14Claims

0Family size

Assignee

RICOH COMPANY, LTD. · JP

Inventors

Xianfeng Chen · 流花街道, CN
Melanie Meixner · Munich, DE
Christian Vedder · Aachen, DE
Theodor Schneller · Aachen, DE
Ulrich Boettger · Kreßbronn, DE

Key dates

Filing date	Apr 14, 2017
Grant date	Oct 13, 2020
Priority date	—
Expiry date	Jun 1, 2037

Classification

Technology area (CPC H)Electricity
CPC primaryH10D1/694
WIPO fieldSurface technology, coating
WIPO sectorChemistry

Abstract

A method of manufacturing a ferroelectric element includes forming an insulating film on one side of a metal substrate by an electron beam (EB) vapor deposition method or a sputtering method; forming a metal film on the insulating film by the sputtering method; and forming a ferroelectric film on the metal film by a sol-gel method. The metal substrate includes iron (Fe) and nickel (Ni), and a content of the nickel (Ni) is greater than or equal to 30% and less than or equal to 40%.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.