Self-healing method for fractured SiC amorphous nanowires
US10801933B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 15, 2017 |
| Grant date | Oct 13, 2020 |
| Priority date | — |
| Expiry date | Feb 13, 2038 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01N2203/0286
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
The present invention provides a self-healing method for fractured SiC amorphous nanowires. A goat hair in a Chinese brush pen of goat hair moves and transfers single crystal nanowires under an optical microscope. On an in-situ nanomechanical test system of a TEM, local single crystal nanowires are irradiated with an electron beam for conducting amorphization transformation. Amorphous length of a single crystal after transformation is 60-100 nm. A fracture strength test is conducted on the amorphous nanowires in the single crystal after transformation in the TEM; and fracture strength of the amorphous nanowires is 9-11 GPa. After the amorphous nanowires are fractured, unloading causes a slight contact between the fractured end surfaces; and self-healing of the nanowires is conducted after waiting for 16-25 min in a vacuum chamber of the TEM. Atom diffusion is found at a healed fracture through in-situ TEM representation; and recrystallization is found in the amorphous nanowires. The present invention provides a method for realizing self-healing for fractured SiC amorphous nanowires without external intervention.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.