Flash memory module, storage system, and method of controlling flash memory
US10803972B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 6, 2017 |
| Grant date | Oct 13, 2020 |
| Priority date | — |
| Expiry date | Mar 15, 2037 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2029/5004
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A flash memory module includes a flash memory and a controller. The controller acquires information indicating reliability of monitoring target data of the flash memory, specifies a first cell, which is a cell having a threshold voltage level lower than a threshold voltage level of a corresponding cell in expected value data obtained by correcting an error bit of the monitoring target data, among cells in which error bits have occurred of the monitoring target data when it is determined that the reliability indicated by the acquired information is lower than a predetermined condition, and transmits rewrite correction target cell data, which is data corresponding to data of the first cell in the expected value data, to the flash memory. The flash memory injects an electron into the first cell based on a threshold voltage indicated by the rewrite correction target cell data.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.